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BFR92T
NPN Silicon RF Transistor Preliminary data For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T (PNP)
3
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR92T
Maximum Ratings Parameter
Marking GFs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 15 20 20 2.5 30 4 280 150 mW C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 69C 1)
-65 ... 150 -65 ... 150
290
K/W
1
Aug-08-2001
BFR92T
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 40 100 200 IEBO 100 A ICBO 100 nA ICES 10 A V(BR)CEO 15 V Symbol min. Values typ. max. Unit
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Aug-08-2001
BFR92T
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ma
Unit max. 0.6 dB GHz pF
typ. 5 0.38 0.2 0.7
fT Ccb Cce Ceb F
3.5 -
Gma |S21e|2 -
1.8 2.9
-
16 10.5
-
13.5 8
-
= |S21 / S12 | (k-(k2-1)1/2 )
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Aug-08-2001
BFR92T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.1213 30 1.9052 14.599 1.371 7.8145 10.416 26.796 4.4601 0.84079 1.2744 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.733 0.46227 10.729 0.01 14.998 0.29088 0.70618 0.3817 0 0.4085 0 0 0.99545 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0947 129.55 0.8983 0.75557 0.01652 0.13793 0.34686 0.32861 946.47 0.13464 0.75 1.11 300 fA fA mA -
V -
V fF V eV K
deg fF -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L1 =
C4 C1 L2 B L3 C
0.762 0.706 0.382 62 84 180 7 40 48
L2 = L3 = C1
C'
B'
Transistor Chip E'
C2 C3 C4 = C5 = C6 =
C6
C2
L1
C3
C5
fF fF
E
EHA07524
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-08-2001
nH nH nH fF fF fF

BFR92T
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
TS
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
Ptotmax / PtotDC
RthJS
10 2
10 1
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 1 -7 10 10
-6
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-08-2001
BFR92T
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
0.8
6
GHz pF 8V
Ccb
4
fT
5V
0.4
3
3V
2
2V
0.2 1
1V
0 0
5
10
15
V
25
0 0
5
10
15
20
25
mA
35
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
22
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
12
8V
dB 8V
dB 5V
14
G ma
5V 3V
6
3V
G
10
2V
3
2V
6
0
2
-3
1V
1V
-2 0
5
10
15
20
25
mA
35
-6 0
5
10
15
20
25
mA
35
IC
IC
6
Aug-08-2001
BFR92T
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
21
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
30
IC=15mA
dB 0.9GHz
dBm 5V
15
0.9GHz
G
12
1.8GHz
IP 3
20
3V
4V
2V
15
1.8GHz
9 10 6
1V
3
5
0 0
3
6
V
12
0 0
5
10
15
20
mA
30
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
45
dB
Power Gain |S21|2= f(f)
V CE = Parameter
35
IC=15mA
IC =15mA
dBm
35 25 30
S21
8V 5V 3V 2V 1V
G
25 20 15 10
20
15
10
8V 5V 3V 2V 1V
5 5 0 -5 0
GHz
0
1
2
3
4
5
7
-5 0
1
2
3
4
5
GHz
7
f
f
7
Aug-08-2001

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